2Gb F Die DRAM Memory Chip Dynamic Random Access Memory DDR3 X16 K4B2G1646F-BCMA

Dynamic Random Access Memory DRAM 2Gb F-die DDR3 SDRAM X16 K4B2G1646F-BCMA

JEDEC standard 1.5v + 0.075V Power Supply
VDoo = 1.5V + 0.075V
400 MHz fcx for 800Mbsec'pin, 533MHz fck for 1066Mb'sec/pin,667MHz fck for 1333Mbsec'pin,800MHz fck for 1600Mb'sec'pin,933MHz fck for 1866Mb'sec'pin, 1066MHz fck for 2133Mb'secpin
8 Banks
Programmable CAs Latency(posted CAS): 5.6.7,8.9.10.11.13.14
Programmable Additive Latency: 0, CL-2 or CL-1 clock
Programmable CAS Write Latency (CWL)=5(DDR3-800).6(DDR3-1066),7(DDR3-1333).8(DDR3-1600),9(DDR3-1866)and10(DDR3-2133)
8-bit pre-fetch
Burst Length: 8 (interleave without any limit, sequential with startingaddress “000" only), 4 with tCCD = 4 which does not allow seamlessread or write leither On the fiy using A12 or MRS]
Bi-directional Differential Data-Strobe
The 2Gb DDR3 SDRAM F-die is organized as a 16Mbit x 16 lOs x 8 banksdevice. This synchronous device achieves high speed double-data-ratetransfer rates of up to 2133Mb'sec/pin (DDR3-2133) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, internal (Self) CalibrationOn Die Termination using OOT pin and Asynchronous Reset .All of the control and address inpuis are synchronized with a pair of externally supplied differential clocks. inputs are latched at the crosspoint of dif.ferential clocks (CK rising and CK falling). All lOs are synchronized with epair of bidirectional strobes (DQS and DOS) in a source synchronous fash.ion. The address bus is used to convey row, column, and bank addressinformation in a RAS/CAS multiplexing style. The DDR3 device operateswith a single 1.5v+ 0.075v power supply and 1.5V + 0.075V VoDeThe 2Gb DDR3 F-die device is available in g6balls FBGA(x16).
Internal(self) calibration : intemal self calibration through ZO pin(RZ0:240 ohm±1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TcAsE 85°C, 3.9us at85°C<TCASE≤ 95 °C
Asynchronous Reset
Package:96 balls FBGA-x16
All of Lead-Free products are compliant for RoHS
All of products are Halcgen-free

Packaging and transportation instructions

- According to the standard export packaging.

Customers can choose from cartons, wooden cases and wooden pallets according to their own requirements.

Q&A

1. How to obtain the price?

We usually quote within 24 hours after receiving your inquiry (except weekends and holidays). If you are in urgent need of a price, please send us an email or contact us in any other way so that we can provide you with a quotation.

2. What is your delivery time?

This depends on the quantity of the order and the season in which you place the order. Usually, we can ship the goods within 7 to 15 days (for small batches), and for large batches, it takes about 30 days.

3. What are your payment terms?

Factory price, 30% deposit, 70%T/T payment before shipment.

4. What is the mode of transportation?

It can be transported by sea, air or express delivery (EMS, UPS, DHL, TNT, FEDEX, etc.). Please confirm with us before placing an order.

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We maintain good quality and competitive prices to ensure that our customers benefit.

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2Gb DRAM Memory Chip

F die Dynamic Random Access Memory

K4B2G1646F-BCMA

2Gb F Die DRAM Memory Chip Dynamic Random Access Memory DDR3 X16 K4B2G1646F-BCMA Images