SRAM 16Mbit Static RAM high-performance COMS static random access memory CY62167DV30LL-55ZXIT
Features■ Thin small outline package (TSOP-I) configurable as1 M × 16 or as 2 M × 8 SRAM■ Wide voltage range: 2.2 V–3.6 V■ Ultra-low active power:Typical active current: 2 mA at f = 1 MHz■ Ultra-low standby power■ Easy memory expansion with CE1, CE2 and OE features■ Automatic power-down when deselected■ Complementary metal oxide semiconductor (CMOS) foroptimum speed / power■ Available in Pb-free and non Pb-free 48-ball very fine-pitch ballgrid array (VFBGA) and 48-pin TSOP I packageFunctional DescriptionThe CY62167DV30 is a high-performance CMOS static RAMorganized as 1M words by 16-bits. This device featuresadvanced circuit design to provide ultra-low active current. Thisis ideal for providing More Battery Life (MoBL) in portableapplications such as cellular telephones. The device also has anautomatic power-down feature that significantly reduces powerconsumption by 99% when addresses are not toggling. Thedevice can also be put into standby mode when deselected (CE1HIGH or CE2 LOW or both BHE and BLE are HIGH). Theinput/output pins (I/O0 through I/O15) are placed in ahigh-impedance state when: deselected (CE1 HIGH or CE2LOW), outputs are disabled (OE HIGH), both Byte High Enableand Byte Low Enable are disabled (BHE, BLE HIGH), or duringa Write operation (CE1 LOW, CE2 HIGH and WE LOW).Writing to the device is accomplished by taking Chip Enables(CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. IfByte Low Enable (BLE) is LOW, then data from I/O pins (I/O0through I/O7), is written into the location specified on the addresspins (A0 through A19). If Byte High Enable (BHE) is LOW, thendata from I/O pins (I/O8 through I/O15) is written into the locationspecified on the address pins (A0 through A19).Reading from the device is accomplished by taking Chip Enables(CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW whileforcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE)is LOW, then data from the memory location specified by theaddress pins appear on I/O0 to I/O7. If Byte High Enable (BHE)is LOW, then data from memory appear on I/O8 to I/O15. See thetruth table at the back of this data sheet for a completedescription of Read and Write modes.For a complete list of related documentation, click here.
Packaging and transportation instructions
- According to the standard export packaging.
Customers can choose from cartons, wooden cases and wooden pallets according to their own requirements.
Q&A
1. How to obtain the price?
We usually quote within 24 hours after receiving your inquiry (except weekends and holidays). If you are in urgent need of a price, please send us an email or contact us in any other way so that we can provide you with a quotation.
2. What is your delivery time?
This depends on the quantity of the order and the season in which you place the order. Usually, we can ship the goods within 7 to 15 days (for small batches), and for large batches, it takes about 30 days.
3. What are your payment terms?
Factory price, 30% deposit, 70%T/T payment before shipment.
4. What is the mode of transportation?
It can be transported by sea, air or express delivery (EMS, UPS, DHL, TNT, FEDEX, etc.). Please confirm with us before placing an order.
5. How do you help our business establish a long-term and good relationship?
We maintain good quality and competitive prices to ensure that our customers benefit.
2. We respect every customer as our friend. We do business with them sincerely and make friends with them, no matter where they come from.
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16Mbit SRAM Chip Memory Data Storage CY62167DV30LL-55ZXIT Images
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